14 citations · 37 across the 7 of their papers we have counts for
7 papers
What enables GaOx as hole transport layer for a 16 percent 1.0 eV CuInSe2 Bottom Cells with VOC above 550 mV?
Francesco Lodola, Zhuangyi Zhou, Boaz Koren +10
Among the highly efficient photovoltaic technologies, that do not rely on epitaxy, only chalcopyrites have a bandgap tunable down to 1.00 eV, the ideal for tandem applications. Thi…
Silver Alloyed Wide Bandgap (Ag,Cu)(In,Ga)S2 Thin Film Solar Cells With 15.5% Efficiency
Yucheng Hu, Ece Washbrook, Arivazhagan Valluvar Oli +14
Sulfide chalcopyrite Cu(In,Ga)S2 (CIGS) is a wide bandgap semiconductor suitable for the top cell of a tandem solar device. Here we demonstrate significant improvements in absorber…
Sodium induced beneficial effects in wide bandgap Cu(In,Ga)S2 solar cell with 15.7% efficiency
Arivazhagan Valluvar Oli, Kulwinder Kaur, Michele Melchiorre +10
This study underscores the pivotal role of sodium (Na) supply in optimizing the optoelectronic properties of wide bandgap (~1.6 eV) Cu(In,Ga)S2 (CIGS) thin film absorbers for high…
The effect of a band gap gradient on the radiative losses in the open circuit voltage of solar cells
Sevan Gharabeiki, Francesco Lodola, Tilly Schaaf +9
The radiative open circuit voltage loss in a solar cell occurs because the absorptance spectrum near the band gap shows gradual increase rather than sharp step function like transi…
Improved sequentially processed Cu(In,Ga)(S,Se)2 by Ag alloying
Aubin JC. M. Prot, Michele Melchiorre, Tilly Schaaf +10
Alloying small quantities of silver into Cu(In,Ga)Se2 was shown to improve the efficiency for wide and low band gap solar cells. We study low band gap industrial Cu(In,Ga)(S,Se)2 a…
Composition variations in Cu(In,Ga)(S,Se)2 solar cells: not a gradient, but an interlaced network of two phases
Aubin JC. M. Prot, Michele Melchiorre, Felix Dingwell +10
Record efficiency in chalcopyrite-based solar cells Cu(In,Ga)(S,Se)2 is achieved using a gallium gradient to increase the band gap of the absorber towards the back side. Although t…
Dislocation-induced structural and luminescence degradation in InAs quantum dot emitters on silicon
Eamonn T. Hughes, Gunnar Kusch, Jennifer Selvidge +6
We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth morphology in InAs quantum dots (QD) grown on silicon. These heterostructures a…