99 citations · 162 across the 5 of their papers we have counts for
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cond-mat.mes-hall2018★ 10 cited
Spin coherence as a function of depth for high-density ensembles of silicon vacancies in proton-irradiated 4H-SiC
P. G. Brereton, D. Puent, J. Vanhoy +2
Defects in wide-bandgap semiconductors provide a pathway for applications in quantum information and sensing in solid state materials. The silicon vacancy in silicon carbide has re…
cond-mat.mes-hall2015★ 99 cited
Spin Coherence and Echo Modulation of the Silicon Vacancy in 4H-SiC at Room Temperature
S. G. Carter, Ö. O. Soykal, Pratibha Dev +2
The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing and sensing. We perform room temperature optically-detected…