1 citations · 1 across the 2 of their papers we have counts for
3 papers
quant-ph2025★ 1 cited
Enhanced readout contrast of V2 ensembles in 4H-SiC through resonant optical excitation
Infiter Tathfif, Samuel G. Carter
The V2 silicon vacancy defect in 4H-SiC has emerged as a promising system for quantum technologies due to its favorable optical and spin properties and the advantages of the SiC ho…
cond-mat.other2025
The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC
Samuel G. Carter, Infiter Tathfif, Charity Burgess +3
The silicon vacancy () in 4H-SiC at its cubic site (V2-center) has shown significant promise for quantum technologies, due to coherent spin states, the mature material syst…
cond-mat.mes-hall2018
Spin coherence as a function of depth for high-density ensembles of silicon vacancies in proton-irradiated 4H-SiC
P. G. Brereton, D. Puent, J. Vanhoy +2
Defects in wide-bandgap semiconductors provide a pathway for applications in quantum information and sensing in solid state materials. The silicon vacancy in silicon carbide has re…