99 citations · 162 across the 5 of their papers we have counts for
5 papers
Enhanced readout contrast of V2 ensembles in 4H-SiC through resonant optical excitation
Infiter Tathfif, Samuel G. Carter
The V2 silicon vacancy defect in 4H-SiC has emerged as a promising system for quantum technologies due to its favorable optical and spin properties and the advantages of the SiC ho…
The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC
Samuel G. Carter, Infiter Tathfif, Charity Burgess +3
The silicon vacancy () in 4H-SiC at its cubic site (V2-center) has shown significant promise for quantum technologies, due to coherent spin states, the mature material syst…
Spin coherence as a function of depth for high-density ensembles of silicon vacancies in proton-irradiated 4H-SiC
P. G. Brereton, D. Puent, J. Vanhoy +2
Defects in wide-bandgap semiconductors provide a pathway for applications in quantum information and sensing in solid state materials. The silicon vacancy in silicon carbide has re…
Spin Coherence and Echo Modulation of the Silicon Vacancy in 4H-SiC at Room Temperature
S. G. Carter, Ö. O. Soykal, Pratibha Dev +2
The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing and sensing. We perform room temperature optically-detected…
Control of the direction and rate of nuclear spin flips in InAs quantum dots using detuned optical pulse trains
S. G. Carter, A. Shabaev, Sophia E. Economou +3
We find that detuning an optical pulse train from electronic transitions in quantum dots controls the direction of nuclear spin flips. The optical pulse train generates electron sp…