most citedEnhanced readout contrast of V2 ensembles in 4H-SiC through resonant optical excitation

1 citations · 1 across the 2 of their papers we have counts for

collaborators
Showing cond-mat.otherShow all

1 paper · 1 filter

cond-mat.other2025

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC

Samuel G. Carter, Infiter Tathfif, Charity Burgess +3

The silicon vacancy () in 4H-SiC at its cubic site (V2-center) has shown significant promise for quantum technologies, due to coherent spin states, the mature material syst…