1 citations · 1 across the 2 of their papers we have counts for
2 papers
quant-ph2025★ 1 cited
Enhanced readout contrast of V2 ensembles in 4H-SiC through resonant optical excitation
Infiter Tathfif, Samuel G. Carter
The V2 silicon vacancy defect in 4H-SiC has emerged as a promising system for quantum technologies due to its favorable optical and spin properties and the advantages of the SiC ho…
cond-mat.other2025
The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC
Samuel G. Carter, Infiter Tathfif, Charity Burgess +3
The silicon vacancy () in 4H-SiC at its cubic site (V2-center) has shown significant promise for quantum technologies, due to coherent spin states, the mature material syst…