most citedComparative Study of InGaAs and GaAsSb Nanowires for Room Temperature Operation of Avalanche Photodiodes at 1.55 μm

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physics.app-ph2025

Comparison of time-resolved photoluminescence and deep-level transient spectroscopy defect evaluations in an InAs nBn detector subjected to in-situ and ex-situ 63 MeV proton irradiation

Rigo A. Carrasco, Christopher P. Hains, Nathan Gajowski +9

Deep-level transient spectroscopy and temperature-dependent time-resolved photoluminescence experiments are performed on identical InAs nBn photodetector structures as a function o…