2 citations · 3 across the 4 of their papers we have counts for
4 papers
Comparison of time-resolved photoluminescence and deep-level transient spectroscopy defect evaluations in an InAs nBn detector subjected to in-situ and ex-situ 63 MeV proton irradiation
Rigo A. Carrasco, Christopher P. Hains, Nathan Gajowski +9
Deep-level transient spectroscopy and temperature-dependent time-resolved photoluminescence experiments are performed on identical InAs nBn photodetector structures as a function o…
Midinfrared Semiconductor Photonics - A Roadmap
J. R. Meyer, I. Vurgaftman, S. -Q. Yu +56
Semiconductor photonic devices operating in the midwave infrared (mid-IR, which we roughly define here as wavelengths spanning 3 to 14 microns) uniquely address a wide range of cur…
InGaAs and GaAsSb PIN Nanowire Arrays with Large Absorption around 1.55 μ m for Room Temperature Infrared Applications
Shrivatch Sankar, Punam Murkute, Micah Meleski +9
We report a comparative analysis between InGaAs and GaAsSb-based top-down cylindrical nanowire arrays fabricated from p-i-n heterostructures. Optical constants measured via spectro…
Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes
Manisha Muduli, Yongkang Xia, Seunghyun Lee +6
There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on…