3 papers
math-ph2025
A discontinuous Galerkin approach for simulating graphene-based electron devices via the Boltzmann transport equation
Giovanni Nastasi, Vittorio Romano
Electron devices based on graphene have lately received a considerable interest; in fact, they could represent the ultimate miniaturization, since the active area is only one atom…
cond-mat.mes-hall2025
Spatially Mapping Phonon Drag in Ultrascaled 5-nm Silicon Nanowire Field-Effect Transistor Based on a Quantum Hydrodynamic Formalism
Houssem Rezgui, Giovanni Nastasi, Manuel Marcoux +1
The growing demand for better performance and lower thermal energy dissipation in nanoelectronic devices is the major driving force of the semiconductor industry's quest for future…
math-ph2025
Ballistic electron transport described by a fourth-order Schrödinger equation
Giulia Elena Aliffi, Giovanni Nastasi, Vittorio Romano
A fourth-order Schrödinger equation for the description of charge transport in semiconductors in the ballistic regime is proposed with the inclusion of non-parabolic effects in the…