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cond-mat.mes-hall2026
Gate-defined quantum dot and charge noise analysis in a Forksheet transistor
Dominic Leclerc, Claude Rohrbacher, Alexis Morel +6
We report the cryogenic characterization of a 14-nm nMOS Forksheet transistor down to 10 mK. We demonstrate that the device retains transistor operation with improved characteristi…
quant-ph2026
Quantum Simulation of Si/SiGe Devices with Experimentally Calibrated Micromagnet Effects
Andrii Sokolov, Conor Power, Mathieu Moras +7
Silicon-based spin qubits in Si/SiGe heterostructures are a leading platform for scalable quantum computing, yet bridging the gap between theoretical computer-aided design(CAD) mod…