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cond-mat.mtrl-sci2025
Performance and reliability potential of BiOSe/BiSeO transistors
Mohammad Rasool Davoudi, Mina Bahrami, Axel Verdianu +16
While 2D materials have enormous potential for future device technologies, many challenges must be overcome before they can be deployed at an industrial scale. One of these challen…
cond-mat.mtrl-sci2025
Accurate Modeling of Gate Leakage Currents in SiC Power MOSFETs
Ang Feng, Alexander Karl, Dominic Waldhör +3
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer fr…