activity
20222026
most citedComphy v3.0 -- A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices

36 citations · 37 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2026★ 1 cited

Efficient Quantum-Mechanical Modeling of Nonradiative Charge Transfer Processes

Alexander Karl, Dominic Waldhoer, Theresia Knobloch +2

Nonradiative charge transfer processes play a central role in a wide range of physical phenomena, including reliability phenomena in semiconductor devices such as bias temperature…

cond-mat.mtrl-sci2025

Towards ultra-scaled nanoelectronics using the zipper material system

Mohammad Rasool Davoudi, Mina Bahrami, Axel Verdianu +20

Two-dimensional (2D) materials could overcome the scaling bottleneck of nanoelectronics by enabling atomically thin channels, superior electrostatic control, and reduced short-chan…

cond-mat.mtrl-sci2025

Accurate Modeling of Gate Leakage Currents in SiC Power MOSFETs

Ang Feng, Alexander Karl, Dominic Waldhör +3

Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer fr…

physics.app-ph2025

Hysteresis Measurements as a Diagnostic Tool: A Systematic Approach for Stability Benchmarking and Performance Projection of 2D-Materials-Based MOSFETs

Alexander Karl, Dominic Waldhoer, Theresia Knobloch +19

Judging by its omnipresence in the literature, the hysteresis observed in the transfer characteristics of emerging transistors based on 2D-materials is widely accepted as an import…

physics.app-ph2025

How to Identify Suitable Gate Dielectrics for Transistors based on Two-Dimensional Semiconductors

Theresia Knobloch, Quentin Smets, Anton E. O. Persson +23

The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing c…

physics.app-ph2022★ 36 cited

Comphy v3.0 -- A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices

Dominic Waldhoer, Christian Schleich, Jakob Michl +9

Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegrap…