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20222026
most citedIn situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys

2 citations · 2 across the 5 of their papers we have counts for

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cond-mat.mtrl-sci2026

Multiscale simulations guided advances for all-optical phase-change waveguides

Hanyi Zhang, Wanting Ma, Wen Zhou +9

Photonic computing using chalcogenide phase-change materials (PCMs) is under active development for energy-efficient artificial intelligence (AI) applications. A key requirement is…

cond-mat.mtrl-sci2025

Atomistic understanding of two-dimensional monatomic phase-change material for non-volatile optical applications

Hanyi Zhang, Xueqi Xing, Jiang-Jing Wang +8

Elemental antimony (Sb) is a promising material for phase-change memory, neuromorphic computing and nanophotonic applications, because its compositional simplicity can prevent phas…

cond-mat.mtrl-sci2024

Ab initio investigation of layered TMGeTe3 alloys for phase-change applications

Yihui Jiang, Suyang Sun, Hanyi Zhang +4

Chalcogenide phase-change materials (PCMs) are one of the most mature candidates for next-generation memory technology. Recently, CrGeTe3 (CrGT) emerged as a promising PCM due to i…

cond-mat.mtrl-sci2024

Homopolar Chemical Bonds Induce In-Plane Anisotropy in Layered Semiconductors

Jieling Tan, Jiang-Jing Wang, Hang-Ming Zhang +6

Main-group layered binary semiconductors, in particular, the III-VI alloys in the binary Ga-Te system are attracting increasing interest for a range of practical applications. The…

cond-mat.mtrl-sci2022★ 2 cited

In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys

Ting-Ting Jiang, Xu-Dong Wang, Jiang-Jing Wang +7

Tailoring the degree of structural disorder in Ge-Sb-Te alloys is important for the development of non-volatile phase-change memory and neuro-inspired computing. Upon crystallizati…