6 papers
Extending Silicon Avalanche Photodetection Beyond m by Direct GeSn Integration
M. R. M. Atalla, J. Bélec, E. Rahier +5
Silicon avalanche photodiodes provide a technologically mature platform for sensitive photodetection, but their spectral response is intrinsically limited by the silicon bandgap. E…
Reduced Dark Current in Cd0.9Zn0.1Te Detector Arrays by Aluminium Oxide Passivation
Sudarshan Singh, Luc Montpetit, Eloïse Rahier +3
Contrary to the prevailing view that processing cadmium zinc telluride (CZT) semiconductors above 150 °C leads to irreversible device degradation, here we show that Al2O3 passivati…
Epitaxy of strained, nuclear-spin free Ge quantum wells from solid source materials
Maximilian Oezkent, Chen-Hsun Lu, Lucas Becker +13
Germanium quantum well heterostructures have rapidly emerged as a leading platform for solid-state quantum information processing; however, material quality limits scalability, and…
Three-dimensional atom-by-atom mapping of nanoscale precipitates in single Te inclusions in Cd0.9Zn0.1Te crystal
Eloïse Rahier, Sebastian Koelling, Guillaume Nadal +3
The complexity and richness of phenomena governing alloy crystal growth can be unraveled by examining the three-dimensional atomic-level distribution of elements and impurities inc…
Nuclear spin-free 70Ge/28Si70Ge quantum well heterostructures grown on industrial SiGe-buffered wafers
P. Daoust, N. Rotaru, D. Biswas +9
The coherence of hole spin qubits in germanium planar heterostructures is limited by the hyperfine coupling to the nuclear spin bath due to 29Si and 73Ge isotopes. Thus, removing t…
Current Crowding in a High-Efficiency Black Phosphorus Light-Emitting Diode Using a Reflective Back Contact
Julien Brodeur, Éloïse Rahier, Mathieu Chartray-Pronovost +3
We demonstrate a high-performance mid-infrared (MIR) light-emitting diode (LED) based on a black phosphorus (b-P)/n-MoS heterojunction. A gold back contact combined with a rhen…