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20232026
most citedSpectral stability of V2 centres in sub-micron 4H-SiC membranes

18 citations · 45 across the 9 of their papers we have counts for

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quant-ph2026

Electrically tunable, two-photon interference from remote silicon-vacancy centers in industrial silicon carbide

Fedor Dzmitryevich Hrunski, Daniel Scheller, Maximilian Hollendonner +8

Distributed quantum networks rely on spatially separated, independently operated quantum systems as network nodes, whose emitted photons must be interfered with high visibility to…

quant-ph2026

Strain-induced modification of spin-optical dynamics in silicon vacancy centers for integrated quantum technologies

Maximilian Hollendonner, Fedor Dzmitryevich Hrunski, Daniel Scheller +8

Silicon vacancy (VSi) centers in 4H silicon carbide have emerged as a highly promising platform for semiconductor-based quantum technologies, combining excellent spin and optical p…

quant-ph2025

Localization and coherent control of 25 nuclear spins in Silicon Carbide

Pierre Kuna, Erik Hesselmeier-Hüttmann, Phillip Schillinger +7

Optically addressable spin defects are excellent candidate platform for quantum sensing and quantum network. Nuclear spins coupled to color centers naturally enable long lived quan…

quant-ph2025

Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout

Marcel Krumrein, Julian M. Bopp, Timo Steidl +5

Spin-active colour centres in 4H silicon carbide are promising candidates as building blocks for quantum information applications. To increase the photon count rate of the emitters…

quant-ph2025★ 11 cited

Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity

Jannis Hessenauer, Jonathan Körber, Misagh Ghezellou +5

Silicon vacancy centers in 4H-silicon carbide (SiC) host a long-lived electronic spin and simultaneously possess spin-resolved optical transitions, making them a great candidate fo…

quant-ph2024★ 1 cited

Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature

Timo Steidl, Pierre Kuna, Erik Hesselmeier-Hüttmann +10

Nanoelectrical and photonic integration of quantum optical components is crucial for scalable solid-state quantum technologies. Silicon carbide stands out as a material with mature…

quant-ph2024★ 1 cited

High fidelity optical readout of a nuclear spin qubit in Silicon Carbide

Erik Hesselmeier, Oliver von Berg, Pierre Kuna +7

Quantum state readout is a key requirement for a successful qubit platform. In this work we demonstrate a high fidelity quantum state readout of a V2 center nuclear spin based on a…

quant-ph2023★ 14 cited

Measuring nuclear spin qubits by qudit-enhanced spectroscopy in Silicon Carbide

Erik Hesselmeier, Pierre Kuna, István Takács +8

Nuclear spins with hyperfine coupling to single electron spins are highly valuable quantum bits. In this work we probe and characterise the particularly rich nuclear spin environme…

quant-ph2023★ 18 cited

Spectral stability of V2 centres in sub-micron 4H-SiC membranes

Jonah Heiler, Jonathan Körber, Erik Hesselmeier +9

Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising…