11 citations · 16 across the 7 of their papers we have counts for
9 papers
Band Tail States: Speed Bump or End of the Road for Two-Dimensional Semiconductors?
Zherui Han, Robert K. A. Bennett, Davide Donadio +7
We propose that the path to realizing the full potential of two-dimensional (2D) electronics lies in understanding and mastering their energy band tail states (BTS). Unlike silicon…
Channel-last gate-all-around nanosheet oxide semiconductor transistors
Fabia F. Athena, Xiangjin Wu, Nathaniel S. Safron +18
As we move beyond the era of transistor miniaturization, back-end-of-line-compatible transistors that can be stacked monolithically in the third dimension promise improved performa…
Gate Dielectric Engineering with an Ultrathin Silicon-oxide Interfacial Dipole Layer for Low-Leakage Oxide-Semiconductor Memories
Fabia F. Athena, Jonathan Hartanto, Matthias Passlack +11
We demonstrate a gate dielectric engineering approach leveraging an ultrathin, atomic layer deposited (ALD) silicon oxide interfacial layer (SiL) between the amorphous oxide semico…
High-current p-type transistors from precursor-engineered synthetic monolayer WSe
Anh Tuan Hoang, Kathryn Neilson, Kaikui Xu +11
Monolayer tungsten diselenide (WSe) is a leading candidate for nanoscale complementary logic. However, high defect densities introduced during thin-film growth and device fabri…
Scaling Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides
Tara Peña, Anton E. O. Persson, Andrey Krayev +13
Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thic…
Deep Learning to Automate Parameter Extraction and Model Fitting of Two-Dimensional Transistors
Robert K. A. Bennett, Jan-Lucas Uslu, Harmon F. Gault +8
We present a deep learning approach to extract physical parameters (e.g., mobility, Schottky contact barrier height, defect profiles) of two-dimensional (2D) transistors from elect…
Low Resistance P-type Contacts to Monolayer WSe through Chlorinated Solvent Doping
Lauren Hoang, Robert K. A. Bennett, Anh Tuan Hoang +7
Tungsten diselenide (WSe) is a promising p-type semiconductor limited by high contact resistance () and the lack of a reliable doping strategy. Here, we demonstra…
High-field Breakdown and Thermal Characterization of Indium Tin Oxide Transistors
Haotian Su, Yuan-Mau Lee, Tara Peña +9
Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and hetero…
Direct X-Ray Measurements of Strain in Monolayer MoS from Capping Layers and Geometrical Features
Kathryn Neilson, Marc Jaikissoon, Dante Zakhidov +4
Strain induced through fabrication, both by patterning and capping, can be used to change the properties of two-dimensional (2D) materials or other thin films. Here, we explore how…