activity
20192025
most citedStrain-Based Room-Temperature Non-Volatile MoTe Ferroelectric Phase Change Transistor

191 citations · 336 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2025

Strain-induced Moiré Reconstruction and Memorization in Two-Dimensional Materials without Twist

Nazmul Hasan, Tara Peña, Aditya Dey +7

Two-dimensional (2D) materials with a twist between layers exhibit a moiré interference pattern with larger periodicity than any of the constituent layer unit cells. In these syste…

cond-mat.mtrl-sci2023★ 25 cited

An atomistic insight into moiré reconstruction in Twisted Bilayer Graphene beyond the magic angle

Aditya Dey, Shoieb Ahmed Chowdhury, Tara Peña +3

Twisted bilayer graphene exhibits electronic properties that are highly correlated with the size and arrangement of moiré patterns. While rigid rotation of two layers creates the t…

physics.app-ph2022★ 5 cited

Ultrasonic Delamination Based Adhesion Testing for High-Throughput Assembly of van der Waals Heterostructures

Tara Peña, Jewel Holt, Arfan Sewaket +1

Two-dimensional (2D) materials assembled into van der Waals (vdW) heterostructures contain unlimited combinations of mechanical, optical, and electrical properties that can be harn…

cond-mat.mes-hall2022★ 33 cited

Moiré Engineering in 2D Heterostructures with Process-Induced Strain

Tara Peña, Aditya Dey, Shoieb A. Chowdhury +6

We report deterministic control over moiré superlattice interference pattern in twisted bilayer graphene by implementing designable device-level heterostrain with process-induced s…

cond-mat.mes-hall2020★ 82 cited

Strain Engineering 2D MoS with Thin Film Stress Capping Layers

Tara Peña, Shoieb A. Chowdhury, Ahmad Azizimanesh +3

We demonstrate a method to induce tensile and compressive strain into two-dimensional transition metal dichalcogenide (TMDC) MoS via the deposition of stressed thin films to…

physics.app-ph2019★ 191 cited

Strain-Based Room-Temperature Non-Volatile MoTe Ferroelectric Phase Change Transistor

Wenhui Hou, Ahmad Azizimanesh, Arfan Sewaket +5

The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-sta…