55 citations · 91 across the 6 of their papers we have counts for
6 papers
Cross-hatch strain effects on SiGe quantum dots for qubit variability estimation
Luis Fabián Peña, Mitchell I. Brickson, Fabrizio Rovaris +11
SiGe heterostructures integrated with Si via virtual substrate (VS) growth are promising hosts for spin qubits. While VS growth targets plastic relaxation, residual cross-hatch str…
Benchmarking low-power flopping-mode spin qubit fidelities in Si/SiGe devices with alloy disorder
Steve M. Young, Mitchell Brickson, Jason R. Petta +1
In the "flopping-mode" regime of electron spin resonance, a single electron confined in a double quantum dot is electrically driven in the presence of a magnetic field gradient. Th…
Using a high-fidelity numerical model to infer the shape of a few-hole Ge quantum dot
Mitchell Brickson, N. Tobias Jacobson, Andrew J. Miller +4
The magnetic properties of hole quantum dots in Ge are sensitive to their shape due to the interplay between strong spin-orbit coupling and confinement. We show that the split-off…
The impact of stochastic incorporation on atomic-precision Si:P arrays
Jeffrey A. Ivie, Quinn Campbell, Justin C. Koepke +9
Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within 1 nm of a target…
Effective out-of-plane g-factor in strained-Ge/SiGe quantum dots
Andrew J. Miller, Mitchell Brickson, Will J. Hardy +6
Recently, lithographic quantum dots in strained-Ge/SiGe have become a promising candidate for quantum computation, with a remarkably quick progression from demonstration of a quant…
Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe
J. F. DiTusa, S. B. Zhang, K. Yamaura +9
We present magnetization, specific heat, resistivity, and Hall effect measurements on the cubic B20 phase of MnGe and CoGe and compare to measurements of isostructural FeGe and ele…