17 citations · 22 across the 4 of their papers we have counts for
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cond-mat.mes-hall2024★ 4 cited
Stabilizing an individual charge fluctuator in a Si/SiGe quantum dot
Feiyang Ye, Ammar Ellaboudy, John M. Nichol
Charge noise is a major obstacle to improved gate fidelities in silicon spin qubits. Numerous methods exist to mitigate charge noise, including improving device fabrication, dynami…
cond-mat.mes-hall2024★ 17 cited
Characterization of individual charge fluctuators in Si/SiGe quantum dots
Feiyang Ye, Ammar Ellaboudy, Dylan Albrecht +3
Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high…