17 citations · 22 across the 4 of their papers we have counts for
4 papers
Multi-level charge fluctuations in a Si/SiGe double quantum dot device
Dylan Albrecht, Feiyang Ye, N. Tobias Jacobson +1
Discrete charge fluctuations, routinely observed in semiconductor quantum dot devices, may contribute significantly to device drift and errors resulting from qubit miscalibration.…
Measuring pulse heating in Si quantum dots with individual two-level fluctuators
Feiyang Ye, Lokendra S. Dhami, John M. Nichol
To encode quantum information in semiconductor spin qubits, voltage pulses are necessary for initialization, gate operation, and readout. However, these pulses dissipate heat, shif…
Stabilizing an individual charge fluctuator in a Si/SiGe quantum dot
Feiyang Ye, Ammar Ellaboudy, John M. Nichol
Charge noise is a major obstacle to improved gate fidelities in silicon spin qubits. Numerous methods exist to mitigate charge noise, including improving device fabrication, dynami…
Characterization of individual charge fluctuators in Si/SiGe quantum dots
Feiyang Ye, Ammar Ellaboudy, Dylan Albrecht +3
Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high…