activity
20162026
most citedCombining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams

7 citations · 9 across the 7 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

5 papers · 1 filter

cond-mat.mtrl-sci2026

Photoelectron Spectroscopy Study of U-Te Thin Films: A Unified Perspective of Hybridization Effects across Compositions

E. A. Tereshina-Chitrova, S. G. Alex, O. Koloskova +6

Uranium tellurides span magnetic and superconducting ground states, yet systematic electronic-structure information across the U-Te series remains scarce. In this study, we perform…

cond-mat.mtrl-sci2025★ 1 cited

Plasmon-Induced Tuning of Cerium Oxidation States in Au@CeO Core@Shell Nanoparticles

Klára Beranová, Kevin C. Prince, Mariana Klementová +2

CeO-based nanoforms are widely used in catalysis, or biomedical applications due to their redox activity and oxygen storage capacity. The key parameters determining their surfa…

cond-mat.mtrl-sci2022

Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy

Mohammad Amin Zare Pour, Oleksandr Romanyuk, Dominik C. Moritz +9

Lattice matched n-type AlInP(100) charge selective contacts are commonly grown on n-p GaInP(100) top absorbers in high-efficiency III-V multijunction solar or photoelectrochemical…

cond-mat.mtrl-sci2022★ 7 cited

Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams

O. Romanyuk, A. Paszuk, I. Gordeev +14

The epitaxial growth of the polar GaP(100) on the nonpolar Si(100) substrate suffers from inevitable defects at the antiphase domain boundaries, resulting from mono-atomic steps on…

cond-mat.mtrl-sci2016

Comment on pyramidal structure formation at the interface between III/V semiconductors and silicon

Thomas Hannappel, Oliver Supplie, Sebastian Bruckner +3

GaP/Si(100) is considered as pseudomporphic virtual substrate for III/V-on-Si integration in order to reduce defects related to polar-on-nonpolar heteroepitaxy. The atomic structur…