7 citations · 9 across the 7 of their papers we have counts for
7 papers
Photoelectron Spectroscopy Study of U-Te Thin Films: A Unified Perspective of Hybridization Effects across Compositions
E. A. Tereshina-Chitrova, S. G. Alex, O. Koloskova +6
Uranium tellurides span magnetic and superconducting ground states, yet systematic electronic-structure information across the U-Te series remains scarce. In this study, we perform…
Electronic Structure of UGe Thin Films from Photoelectron Spectroscopy
Sonu George Alex, Oleksandr Romanyuk, Ivan Zorilo +7
Uranium digermanide UGe, the first ferromagnetic superconductor, represents a key composition in the U-Ge system dominated by U-5 states. To examine the impact of controlled…
Plasmon-Induced Tuning of Cerium Oxidation States in Au@CeO Core@Shell Nanoparticles
Klára Beranová, Kevin C. Prince, Mariana Klementová +2
CeO-based nanoforms are widely used in catalysis, or biomedical applications due to their redox activity and oxygen storage capacity. The key parameters determining their surfa…
Photoemission study and band alignment of GaN passivation layers on GaInP heterointerface
S. Shekarabi, M. A. Zare Pour, H. Su +6
III-V semiconductor-based photoelectrochemical (PEC) devices show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is a relevant top photoabsorber l…
Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy
Mohammad Amin Zare Pour, Oleksandr Romanyuk, Dominik C. Moritz +9
Lattice matched n-type AlInP(100) charge selective contacts are commonly grown on n-p GaInP(100) top absorbers in high-efficiency III-V multijunction solar or photoelectrochemical…
Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams
O. Romanyuk, A. Paszuk, I. Gordeev +14
The epitaxial growth of the polar GaP(100) on the nonpolar Si(100) substrate suffers from inevitable defects at the antiphase domain boundaries, resulting from mono-atomic steps on…
Comment on pyramidal structure formation at the interface between III/V semiconductors and silicon
Thomas Hannappel, Oliver Supplie, Sebastian Bruckner +3
GaP/Si(100) is considered as pseudomporphic virtual substrate for III/V-on-Si integration in order to reduce defects related to polar-on-nonpolar heteroepitaxy. The atomic structur…