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Experimental Demonstration of Nonlinear Photoconductive Gain in N-Doped -GaO Devices
Vikash K. Jangir, Sudip K. Mazumder
Photoconductive devices based on ultra-wide-bandgap (UWBG) materials offer a promising pathway toward compact, high-voltage (HV) optoelectronic and optical sensing in harsh environ…
Record Responsivity-conductance Performance in Sub-bandgap-triggered Ga2O3 PCSS
Vikash Jangir, Sourojit K. Mazumder, Sudip K. Mazumder
We present an investigation into the role of anode grid pitch and excitation spectrum on the performance of high-power optoelectronic switches utilizing Fe-doped -GaO. By…
Parametric Analysis of First High-Gain Vertical Fe-doped Ultrafast Ga2O3 Photoconductive Semiconductor Switch
N. Karpourazar, S. K. Mazumder, V. Jangir +3
We investigate, as part of a Lawrence-Livermore-National-Laboratory (LLNL) sponsored-research work initiated in February of 2021, the parametric performance analysis of ultra-wide…
Comparative Study of Lateral and Vertical Beta-Ga2O3 Photoconductive Switches via Intrinsic and Extrinsic Optical Triggering
Vikash K. Jangir, Sudip K. Mazumder
Gallium oxide (Ga2O3), with its ultra-wide bandgap (approximately 4.8 eV) and high breakdown field (approximately 8 MV per cm), is a leading candidate for photoconductive semicondu…