3 papers
physics.app-ph2026
Experimental Demonstration of Nonlinear Photoconductive Gain in N-Doped -GaO Devices
Vikash K. Jangir, Sudip K. Mazumder
Photoconductive devices based on ultra-wide-bandgap (UWBG) materials offer a promising pathway toward compact, high-voltage (HV) optoelectronic and optical sensing in harsh environ…
physics.app-ph2025
Parametric Analysis of First High-Gain Vertical Fe-doped Ultrafast Ga2O3 Photoconductive Semiconductor Switch
N. Karpourazar, S. K. Mazumder, V. Jangir +3
We investigate, as part of a Lawrence-Livermore-National-Laboratory (LLNL) sponsored-research work initiated in February of 2021, the parametric performance analysis of ultra-wide…
physics.app-ph2025
Comparative Study of Lateral and Vertical Beta-Ga2O3 Photoconductive Switches via Intrinsic and Extrinsic Optical Triggering
Vikash K. Jangir, Sudip K. Mazumder
Gallium oxide (Ga2O3), with its ultra-wide bandgap (approximately 4.8 eV) and high breakdown field (approximately 8 MV per cm), is a leading candidate for photoconductive semicondu…