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cs.ET2026
System-Technology Co-Evaluation of A7 CFET and A10 NSFET Technologies from Cell Parasitics to Chip Reliability
Mahdi Benkhelifa, Leon Mayr, Hadi Nour Eddine +3
Complementary FETs (CFETs) extend nanosheet FET (NSFET) scaling by vertically stacking n- and p-type gate-all-around (GAA) devices, thereby shrinking standard-cell area. The perfor…
cs.ET2025
Defect-Aware Physics-Based Compact Model for Ferroelectric nvCap: From TCAD Calibration to Circuit Co-Design
Luca Fehlings, Nihal Raut, Md. Hanif Ali +4
Ferroelectric non-volatile capacitance-based memories enable non-destructive readout and low-power in-memory computing with 3D stacking potential. However, their limited memory win…