5 papers
Direct Observation of Nanoscale Polarization Switching in HZO Ferroelectrics Using STEM-EBIC
Prasanna Venkatesan, Taeyoung Song, Yueyun Chen +22
We report the experimental observation of discrete ferroelectric switching down to 0.475 nm x 0.475 nm in HfO2-based ferroelectrics using correlated STEM electron beam induced curr…
System-Technology Co-Evaluation of A7 CFET and A10 NSFET Technologies from Cell Parasitics to Chip Reliability
Mahdi Benkhelifa, Leon Mayr, Hadi Nour Eddine +3
Complementary FETs (CFETs) extend nanosheet FET (NSFET) scaling by vertically stacking n- and p-type gate-all-around (GAA) devices, thereby shrinking standard-cell area. The perfor…
ALD-Derived WO3-x Leads to Nearly Wake-Up-Free Ferroelectric Hf0.5Zr0.5O2 at Elevated Temperatures
Nashrah Afroze, Jihoon Choi, Salma Soliman +10
Breaking the memory wall in advanced computing architectures will require complex 3D integration of emerging memory materials such as ferroelectrics-either within the back-end-of-l…
A Dual-Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High-Speed Reservoir Computing
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman +6
The exponential growth of edge artificial intelligence demands material-focused solutions to overcome energy consumption and latency limitations when processing real-time temporal…
Defect-Aware Physics-Based Compact Model for Ferroelectric nvCap: From TCAD Calibration to Circuit Co-Design
Luca Fehlings, Nihal Raut, Md. Hanif Ali +4
Ferroelectric non-volatile capacitance-based memories enable non-destructive readout and low-power in-memory computing with 3D stacking potential. However, their limited memory win…