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20242026
most citedPolytypic Quantum Wells in Si and Ge: Impact of 2D Hexagonal Inclusions on Electronic Band Structure

6 citations · 14 across the 10 of their papers we have counts for

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8 papers · 1 filter

cond-mat.mtrl-sci2026

Growth and characterization of planar hexagonal Ge on CdS

Andrea Besana, Veronica Regazzoni, Marco Faverzani +13

Hexagonal group-IV semiconductors have attracted increasing interest owing to their unconventional electronic and optical properties compared to the cubic diamond phase. However, t…

cond-mat.mtrl-sci2026

Neural surrogates for crystal growth dynamics with variable supersaturation: explicit vs. implicit conditioning

Matteo Rigoni, Daniele Lanzoni, Francesco Montalenti +1

Simulations of crystal growth are performed by using Convolutional Recurrent Neural Network surrogate models, trained on a dataset of time sequences computed by numerical integrati…

cond-mat.mtrl-sci2026

Resolving the Metastable Si-XIII Structure through Convergent Theory and Experiment

Fabrizio Rovaris, Corrado Bongiorno, Anna Marzegalli +10

Silicon is the undisputed cornerstone of modern technology, with applications ranging from micro- and opto-electronics to quantum technologies. Recently, the exploration of its all…

cond-mat.mtrl-sci2026

Electronic States, Spin-Orbit Coupling and Magnetism in Germanium 60° Dislocations

Veronica Regazzoni, Fabrizio Rovaris, Anna Marzegalli +2

Defects in semiconductors have recently attracted renewed interest owing to their potential in novel quantum applications. Here we investigate the electronic and magnetic propertie…

cond-mat.mtrl-sci2026

Cross-hatch strain effects on SiGe quantum dots for qubit variability estimation

Luis Fabián Peña, Mitchell I. Brickson, Fabrizio Rovaris +11

SiGe heterostructures integrated with Si via virtual substrate (VS) growth are promising hosts for spin qubits. While VS growth targets plastic relaxation, residual cross-hatch str…

cond-mat.mtrl-sci2025

Unified machine-learning framework for property prediction and time-evolution simulation of strained alloy microstructure

Andrea Fantasia, Daniele Lanzoni, Niccolò Di Eugenio +3

We introduce a unified machine-learning framework designed to conveniently tackle the temporal evolution of alloy microstructures under the influence of an elastic field. This appr…

cond-mat.mtrl-sci2024★ 3 cited

Unraveling the Atomic-Scale Pathways Driving Pressure-Induced Phase Transitions in Silicon

Fabrizio Rovaris, Anna Marzegalli, Francesco Montalenti +1

Silicon exhibits several metastable allotropes which recently attracted attention in the quest for materials with superior (e.g. optical) properties, compatible with Si technology.…

cond-mat.mtrl-sci2024★ 6 cited

Polytypic Quantum Wells in Si and Ge: Impact of 2D Hexagonal Inclusions on Electronic Band Structure

Anna Marzegalli, Francesco Montalenti, Emilio Scalise

Crystal defects, traditionally viewed as detrimental, are now being explored for quantum technology applications. This study focuses on stacking faults in silicon and germanium, fo…