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20242026
most citedHigh-yield engineering and identification of oxygen-related modified divacancies in 4H-SiC

2 citations · 2 across the 5 of their papers we have counts for

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quant-ph2026

Room-Temperature Storage of Entanglement in a Silicon Carbide Quantum Node

Shuo Ren, Rui-Jian Liang, Qi-Cheng Hu +8

Robust entanglement at room temperature is a central challenge for solid-state quantum information processing and quantum-enhanced sensing. Here we demonstrate room-temperature sto…

quant-ph2026

Coherent Spin-Photon Interface of single PL6 Color Centers in Silicon Carbide

Zhen-Xuan He, Gergő Thiering, Rui-Jian Liang +10

The PL6 color center in silicon carbide has recently emerged as a promising platform for quantum information processing, yet its coherent spin--photon interface has remained largel…

quant-ph2026

Decoherence-protected entangling gates in a silicon carbide quantum node

Shuo Ren, Rui-Jian Liang, Zhen-Xuan He +8

Solid-state color centers are promising candidates for nodes in quantum network architectures. However, realizing scalable and fully functional quantum nodes, comprising both proce…

quant-ph2025★ 2 cited

High-yield engineering and identification of oxygen-related modified divacancies in 4H-SiC

Qi-Cheng Hu, Ji-Yang Zhou, Shuo Ren +9

Modified divacancies in the 4H polytype of silicon carbide (SiC) exhibit enhanced charge stability and spin addressability at room temperature, making them attractive for quantum a…

quant-ph2024

Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation

Zhen-Xuan He, Ji-Yang Zhou, Wu-Xi Lin +13

Color centers in silicon carbide (SiC) have demonstrated significant promise for quantum information processing. However, the undesirable ionization process that occurs during opti…