141 citations · 565 across the 19 of their papers we have counts for
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Optimization of ohmic contacts to n-type GaAs nanowires
Ludwig Hüttenhofer, Dionysios Xydias, Ryan B. Lewis +6
III-V nanowires are comprehensively studied because of their suitability for optoelectronic quantum technology applications. However, their small dimensions and the spatial separat…
Diameter evolution of selective area grown Ga-assisted GaAs nanowires
Hanno Küpers, Ryan B. Lewis, Abbes Tahraoui +5
We present a novel two-step approach for the selective area growth (SAG) of GaAs nanowires (NWs) by molecular beam epitaxy which has enabled a detailed exploration of the NW diamet…
Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)
Hanno Küpers, Abbes Tahraoui, Ryan B. Lewis +6
The selective area growth of Ga-assisted GaAs nanowires (NWs) with a high vertical yield on Si(111) substrates is still challenging. Here, we explore different surface preparations…
Acousto-electric transport in MgO/ZnO-covered graphene on SiC
Yi-Ting Liou, Alberto Hernández-Mínguez, Jens Herfort +3
We investigate the acousto-electric transport induced by surface acoustic waves (SAWs) in epitaxial graphene (EG) coated by a MgO/ZnO film. The deposition of a thin MgO layer prote…
The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires
M. Musolino, F. Sacconi, A. Tahraoui +5
In the experimental electroluminescence (EL) spectra of light-emitting diodes (LEDs) based on N-polar (In,Ga)N/GaN nanowires (NWs), we observed a double peak structure. The relativ…