activity
20072019
most citedWriting Electronic Devices on Paper with Carbon Nanotube Ink

53 citations · 271 across the 21 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

19 papers · 1 filter

cond-mat.mes-hall2019

Graphene bandgap induced by ferroelectric Pca2 HfO substrate: a first-principles study

George Alexandru Nemnes, Daniela Dragoman, Mircea Dragoman

The electronic properties of graphene on top of ferroelectric HfO substrates in orthorhombic phase with space group Pca2 are investigated using density functional theory ca…

cond-mat.mes-hall2018★ 17 cited

Wafer-scale fabrication and room-temperature experiments on graphene-based gates for quantum computation

Mircea Dragoman, Adrian Dinescu, Daniela Dragoman

We have fabricated at wafer scale graphene-based configurations suitable for implementing at room temperature one-qubit quantum gates and a modified Deutsch-Jozsa algorithm. Our me…

cond-mat.mes-hall2017★ 14 cited

Solving the graphene electronics conundrum: high mobility and high on-off ratio in graphene nanopatterned transistors

Mircea Dragoman, Adrian Dinescu, Daniela Dragoman

Tens of graphene transistors with nanoperforated channels and different channel lengths were fabricated at the wafer scale. The nanoholes have a central diameter of 20 nm and a per…

cond-mat.mes-hall2016★ 9 cited

Memristive GaN ultrathin suspended membrane array

Mircea Dragoman, Ion Tiginyanu, Daniela Dragoman +2

In this paper, we show that ultrathin GaN membranes having a thickness of 15 nm and planar dimensions of 12x184 microns act as memristive devices. This fact is due to the migration…

cond-mat.mes-hall2016★ 20 cited

Room temperature nanostructured graphene transistors with high on-off ratio

Mircea Dragoman, Adrian Dinescu, Daniela Dragoman

We report the batch fabrication of graphene field-effect-transistors (GFETs) with nanoperforated graphene as channel. The transistors were cut and encapsulated. The encapsulated GF…

cond-mat.mes-hall2016★ 14 cited

Room temperature on-wafer ballistic graphene field-effect-transistor with oblique double-gate

Mircea Dragoman, Adrian Dinescu, Daniela Dragoman

We have fabricated and measured ballistic graphene transistors with two oblique gates that can be independently biased. The gate lengths are about 38 nm and are separated by a dist…

cond-mat.mes-hall2014

Two-and three-qubit room-temperature graphene quantum gates

Daniela Dragoman, Mircea Dragoman

Proposed configurations for the implementation of graphene-based CNOT and Toffoli gates working at room temperature are presented. These two logic gates, essential for any quantum…

cond-mat.mes-hall2014★ 10 cited

Enhanced architectures for room-temperature reversible logic gates in graphene

Daniela Dragoman, Mircea Dragoman

We show that reversible two- and three-input logic gates, among which we mention the universal Toffoli gate, can be implemented with three tilted gating electrodes patterned on a m…

cond-mat.mes-hall2014★ 28 cited

Negative differential resistance in graphene-based ballistic field effect transistor with oblique top gate

Mircea Dragoman, Adrian Dinescu, Daniela Dragoman

Negative differential resistance (NDR) with room temperature peak-valley-ratio of 8 has been observed in a ballistic field-effect-transistor (FET) based on graphene, having an obli…

cond-mat.mes-hall2014

Complementary memristive device based on a thin film of MoS2 monolayers

Antonio Radoi, Mircea Dragoman, Daniela Dragoman +1

In this manuscript we demonstrate experimentally that a thin film of MoS2 monolayers formed by drop-casting on a gold interdigitated electrode on Si/SiO2 behaves like a complementa…

cond-mat.mes-hall2013★ 9 cited

Microwave and millimeterwave electrical permittivity of graphene monolayer

Alina Cismaru, Mircea Dragoman, Adrian Dinescu +3

The effective electrical permittivity of a graphene monolayer is experimentally investigated in the 5-40 GHz range, which encompasses the microwave and the lower part of millimeter…

cond-mat.mes-hall2012★ 32 cited

Geometrical-induced rectification in two-dimensional ballistic nanodevices

Daniela Dragoman, Mircea Dragoman

The paper demonstrates that a two-dimensional ballistic nanodevice in which the electron gas satisfies either the Schroodinger equation (as in quantum wells in common semiconductor…

cond-mat.mes-hall2012★ 20 cited

Extending ballistic graphene FET lumped element models to diffusive devices

Giancarlo Vincenzi, G. Deligeorgis, Fabio Coccetti +4

In this work, a modified, lumped element graphene field effect device model is presented. The model is based on the "Top-of-the-barrier" approach which is usually valid only for ba…

cond-mat.mes-hall2012★ 3 cited

Graphene-like metallic-on-silicon field effect transistor

M. Dragoman, G. Konstantinidis, K. Tsagaraki +3

In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of…

cond-mat.mes-hall2012★ 7 cited

Graphene radio: Detecting radiowaves with a single atom sheet

Mircea Dragoman, Dan Neculoiu, Alina Cismaru +3

We present the experimental evidence of RF demodulation by a graphene monolayer embedded in a coplanar structure. The demodulator was tested in the frequency range from 100 MHz to…

cond-mat.mes-hall2011★ 12 cited

Time Flow in Graphene and Its Implications on the Cutoff Frequency of Ballistic Graphene Devices

Daniela Dragoman, Mircea Dragoman

This manuscript deals with time flow in ballistic graphene devices. It is commonly believed that in the ballistic regime the traversal time of carriers in gated graphene at normal…

cond-mat.mes-hall2009★ 2 cited

Real-Time Detection of Deoxyribonucleic Acid Bases via their Negative Differential Conductance Signature

Daniela Dragoman, Mircea Dragoman

In this paper we present a method for the real-time detection of the bases of the deoxyribonucleic acid using their signatures in negative differential conductance measurements. Th…

cond-mat.mes-hall2009

Current Oscillations and Negative Resistances in Crossed Carbon Nanotubes Suspended Over a Dielectric Trench

M. Al Ahmad, D. Dragoman, M. Dragoman +4

An oscillatory dependence of the drain current on the drain voltage is found in a nanostructure consisting of two crossing semiconductor carbon nanotubes that are suspended over a…

cond-mat.mes-hall2009★ 53 cited

Writing Electronic Devices on Paper with Carbon Nanotube Ink

M. Dragoman, E. Flahaut, D. Dragoman +2

The normal paper used in any printer is among the cheapest flexible organic materials that exist. We demonstrate that we can print on paper high-frequency circuits tunable with an…