activity
20072019
most citedWriting Electronic Devices on Paper with Carbon Nanotube Ink

53 citations · 271 across the 21 of their papers we have counts for

collaborators

21 papers

cond-mat.mes-hall2019

Graphene bandgap induced by ferroelectric Pca2 HfO substrate: a first-principles study

George Alexandru Nemnes, Daniela Dragoman, Mircea Dragoman

The electronic properties of graphene on top of ferroelectric HfO substrates in orthorhombic phase with space group Pca2 are investigated using density functional theory ca…

cond-mat.mes-hall2018★ 17 cited

Wafer-scale fabrication and room-temperature experiments on graphene-based gates for quantum computation

Mircea Dragoman, Adrian Dinescu, Daniela Dragoman

We have fabricated at wafer scale graphene-based configurations suitable for implementing at room temperature one-qubit quantum gates and a modified Deutsch-Jozsa algorithm. Our me…

cond-mat.mes-hall2017★ 14 cited

Solving the graphene electronics conundrum: high mobility and high on-off ratio in graphene nanopatterned transistors

Mircea Dragoman, Adrian Dinescu, Daniela Dragoman

Tens of graphene transistors with nanoperforated channels and different channel lengths were fabricated at the wafer scale. The nanoholes have a central diameter of 20 nm and a per…

cond-mat.mes-hall2016★ 9 cited

Memristive GaN ultrathin suspended membrane array

Mircea Dragoman, Ion Tiginyanu, Daniela Dragoman +2

In this paper, we show that ultrathin GaN membranes having a thickness of 15 nm and planar dimensions of 12x184 microns act as memristive devices. This fact is due to the migration…

cond-mat.mes-hall2016★ 20 cited

Room temperature nanostructured graphene transistors with high on-off ratio

Mircea Dragoman, Adrian Dinescu, Daniela Dragoman

We report the batch fabrication of graphene field-effect-transistors (GFETs) with nanoperforated graphene as channel. The transistors were cut and encapsulated. The encapsulated GF…

cond-mat.mes-hall2016★ 14 cited

Room temperature on-wafer ballistic graphene field-effect-transistor with oblique double-gate

Mircea Dragoman, Adrian Dinescu, Daniela Dragoman

We have fabricated and measured ballistic graphene transistors with two oblique gates that can be independently biased. The gate lengths are about 38 nm and are separated by a dist…