57 citations · 57 across the 1 of their papers we have counts for
1 paper
G. Catalan, J. F. Scott, A. Schilling +1
Ferroelectric random access memory cells (FeRAMs) have reached 450 x 400 nm production (0.18 micron^2) at Samsung with lead zirconate-titanate (PZT), 0.13 micron^2 at Matsushita wi…