activity
20062023
most citedMagnetism and anomalous transport in the Weyl semimetal PrAlGe: Possible route to axial gauge fields

114 citations · 357 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.supr-con2023★ 1 cited

Phonon heat capacity and disorder: new opportunities for performance enhancement of superconducting devices

M. Sidorova, A. D. Semenov, I. Charaev +4

We experimentally study for the first time the self-heating normal domain in magnetic field using nanowires made of granular NbTiN films with sub-10~nm thicknesses. Specifically, w…

cond-mat.supr-con2021

Magnetoconductance and photoresponse properties of disordered NbTiN films

M. Sidorova, A. Semenov, H. -W. Huebers +4

We report on the study of phonon properties and electron-phonon coupling in thin NbTiN films, which are intensively exploited in superconducting devices. Studied NbTiN films with t…

cond-mat.str-el2020★ 114 cited

Magnetism and anomalous transport in the Weyl semimetal PrAlGe: Possible route to axial gauge fields

D. Destraz, L. Das, S. S. Tsirkin +10

In magnetic Weyl semimetals, where magnetism breaks time-reversal symmetry, large magnetically sensitive anomalous transport responses are anticipated that could be useful for topo…

cond-mat.mtrl-sci2013★ 54 cited

Manipulating Ferroelectric Domains in Nanostructures Under Electron Beams

Rajeev Ahluwalia, Nathaniel Ng, Alina Schilling +5

Freestanding BaTiO3 nanodots exhibit domain structures characterized by distinct quadrants of ferroelastic 90° domains in transmission electron microscopy (TEM) observations. These…

cond-mat.mtrl-sci2009★ 55 cited

Origin of Ferroelastic Domains in Free-Standing Single Crystal Ferroelectric Films

I. A. Luk'yanchuk, A. Schilling, J. M. Gregg +2

The origin of the unusual 90^o ferroelectric / ferroelastic domains, consistently observed in recent studies on meso and nanoscale free-standing single crystals of BaTiO3 [Schillin…

cond-mat.mtrl-sci2007★ 57 cited

Domains in Three-dimensional Ferroelectric Nanostructures: Theory and Experiment

G. Catalan, J. F. Scott, A. Schilling +1

Ferroelectric random access memory cells (FeRAMs) have reached 450 x 400 nm production (0.18 micron^2) at Samsung with lead zirconate-titanate (PZT), 0.13 micron^2 at Matsushita wi…