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Quantum Transport in Two-Dimensional WS with High-Efficiency Carrier Injection Through Indium Alloy Contacts
Chit Siong Lau, Jing Yee Chee, Yee Sin Ang +8
Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semicond…
Electronic polarizability as the fundamental variable in the dielectric properties of two-dimensional materials
Tian Tian, Declan Scullion, Dale Hughes +5
The dielectric constant, which defines the polarization of the media, is a key quantity in condensed matter. It determines several electronic and optoelectronic properties importan…
An Inside Look at the Ti-MoS2 Contact in Ultra-thin Field Effect Transistor with Atomic Resolution
Ryan J. Wu, Sagar Udyavara, Rui Ma +5
Two-dimensional molybdenum disulfide (MoS2) is an excellent channel material for ultra-thin field effect transistors. However, high contact resistance across the metal-MoS2 interfa…
Valence band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics
Hisato Yamaguchi, Shuichi Ogawa, Daiki Watanabe +19
We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures…
Spatially Resolved Photo-Excited Charge Carrier Dynamics in Phase-Engineered Monolayer MoS2
Hisato Yamaguchi, Jean-Christophe Blancon, Rajesh Kappera +9
A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performan…
Reduced graphene oxide thin films as ultrabarriers for organic electronics
Hisato Yamaguchi, Jimmy Granstrom, Wanyi Nie +8
Encapsulation of electronic devices based on organic materials that are prone to degradation even under normal atmospheric conditions with hermetic barriers is crucial for increasi…