activity
20052022
most citedEnhanced Catalytic Activity in Strained Chemically Exfoliated WS2 Nanosheets for Hydrogen Evolution

2.6k citations · 3k across the 17 of their papers we have counts for

collaborators

17 papers

physics.chem-ph2022★ 22 cited

Recent Advances in Design of Electrocatalysts for High-Current-Density Water Splitting

Yuting Luo, Zhiyuan Zhang, Manish Chhowalla +1

Electrochemical water splitting technology for producing "green hydrogen" is important for the global mission of carbon neutrality. Electrocatalysts with decent performance at high…

cond-mat.mtrl-sci2021★ 46 cited

Quantum Transport in Two-Dimensional WS with High-Efficiency Carrier Injection Through Indium Alloy Contacts

Chit Siong Lau, Jing Yee Chee, Yee Sin Ang +8

Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semicond…

cond-mat.mtrl-sci2019★ 129 cited

Electronic polarizability as the fundamental variable in the dielectric properties of two-dimensional materials

Tian Tian, Declan Scullion, Dale Hughes +5

The dielectric constant, which defines the polarization of the media, is a key quantity in condensed matter. It determines several electronic and optoelectronic properties importan…

cond-mat.mes-hall2019★ 20 cited

Evidence of Rotational Fröhlich Coupling in Polaronic Trions

Maxim Trushin, Soumya Sarkar, Sinu Mathew +9

Electrons commonly couple through Fröhlich interactions with longitudinal optical phonons to form polarons. However, trions possess a finite angular momentum and should therefore c…

cond-mat.mtrl-sci2018★ 45 cited

An Inside Look at the Ti-MoS2 Contact in Ultra-thin Field Effect Transistor with Atomic Resolution

Ryan J. Wu, Sagar Udyavara, Rui Ma +5

Two-dimensional molybdenum disulfide (MoS2) is an excellent channel material for ultra-thin field effect transistors. However, high contact resistance across the metal-MoS2 interfa…

cond-mat.mtrl-sci2016★ 14 cited

Valence band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

Hisato Yamaguchi, Shuichi Ogawa, Daiki Watanabe +19

We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures…