A. Bhuiyan

collaborators

Showing physics.app-phShow all

4 papers · 1 filter

physics.app-ph2026

Vertical $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky Diodes with Deep-Etch Field Termination using Plasma-free Ga-assisted Etching

Saleh Ahmed Khan, Ahmed Ibreljic, Anhar Bhuiyan

A deep-etch field termination strategy using a Ga-assisted plasma-free etching technique in a low-pressure chemical vapor deposition (LPCVD) system is demonstrated for $I^^{2}$ -Ga $_{2}$ O…

physics.app-ph2026

Fast-Neutron Irradiation Effect in Heteroepitaxial $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

Saleh Ahmed Khan, Ahmed Ibreljic, Sourav Sarker +2

In this work, we investigate the response of Ni/ $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of $1\times10^{1…

physics.app-ph2026

High-Purity Diamond Integration on $I^^{2}$ -Ga $_{2}$ O $_{3}$ via Microwave Plasma CVD for Enhanced Thermal Management

Saleh Ahmed Khan, Stephen Margiotta, Ahmed Ibreljic +1

The integration of diamond with $I^^{2}$ -Ga $_{2}$ O $_{3}$ presents a promising pathway to enhance thermal management in high-power electronic devices, where the inherently low thermal condu…

physics.app-ph2026

HVPE Growth of Si-Doped $I^^{2}$ -Ga $_{2}$ O $_{3}$ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties

Sourav Sarker, Saleh Ahmed Khan, Ahmed Ibreljic +1

Si-doped $I^^{2}$ -Ga $_{2}$ O $_{3}$ films were heteroepitaxially grown on sapphire substrates using HVPE. The influence of sapphire offcut on growth kinetics, surface morphology, crystalline…

Vertical I^2-Ga2​O3​ Schottky Diodes with Deep-Etch Field Termination using Plasma-free Ga-assisted Etching

Fast-Neutron Irradiation Effect in Heteroepitaxial I^2-Ga2​O3​ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

High-Purity Diamond Integration on I^2-Ga2​O3​ via Microwave Plasma CVD for Enhanced Thermal Management

HVPE Growth of Si-Doped I^2-Ga2​O3​ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties

Vertical $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky Diodes with Deep-Etch Field Termination using Plasma-free Ga-assisted Etching

Fast-Neutron Irradiation Effect in Heteroepitaxial $I^^{2}$ -Ga $_{2}$ O $_{3}$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

High-Purity Diamond Integration on $I^^{2}$ -Ga $_{2}$ O $_{3}$ via Microwave Plasma CVD for Enhanced Thermal Management

HVPE Growth of Si-Doped $I^^{2}$ -Ga $_{2}$ O $_{3}$ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties