92 citations · 93 across the 6 of their papers we have counts for
9 papers
Direct Observation of Nanoscale Polarization Switching in HZO Ferroelectrics Using STEM-EBIC
Prasanna Venkatesan, Taeyoung Song, Yueyun Chen +22
We report the experimental observation of discrete ferroelectric switching down to 0.475 nm x 0.475 nm in HfO2-based ferroelectrics using correlated STEM electron beam induced curr…
Multi-bit Ferroelectric-NAND for High-throughput Massive Database Search
Prasanna Venkatesan, Tanvir H. Pantha, Po-Kai Hsu +28
The growing demand for large-scale database search in data-intensive applications, ranging from proteomics to autonomous systems, has exposed fundamental limitations in von Neumann…
The First Switch Effect in Ferroelectric Field-Effect Transistors
Priyankka Ravikumar, Prasanna Venkatesan, Chinsung Park +7
In this work, a ferroelectric field-effect transistor (FEFET) is systematically characterized and compared with an equivalent standard MOSFET with an equivalent oxide thickness. We…
Row Hammer Effect and Floating Body Effect of Monolithic 3D Stackable 1T1C DRAM
Sungwon Cho, Po-Kai Hsu, Kiseok Lee +3
Monolithic 3D stackable 1T1C DRAM technology is on the rise, with initial prototypes reported by the industry. This work presents a comprehensive reliability study focusing on the…
FeNOMS: Enhancing Open Modification Spectral Library Search with In-Storage Processing on Ferroelectric NAND (FeNAND) Flash
Sumukh Pinge, Ashkan Moradifirouzabadi, Keming Fan +29
The rapid expansion of mass spectrometry (MS) data, now exceeding hundreds of terabytes, poses significant challenges for efficient, large-scale library search - a critical compone…
Sub-nm2 ferroelectric domains via charged 180 degree walls in ZrO2
Nashrah Afroze, Hamoon Fahrvandi, Guodong Ren +31
Flat phonon bands in fluorite ferroelectrics (HfO2 or ZrO2) shrink polar domains laterally to an irreducible half-unit-cell width (0.27 nm) within which the vertical arrangement of…
Towards Reverse-Engineering the Brain: Brain-Derived Neuromorphic Computing Approach with Photonic, Electronic, and Ionic Dynamicity in 3D integrated circuits
S. J. Ben Yoo, Luis El-Srouji, Suman Datta +11
The human brain has immense learning capabilities at extreme energy efficiencies and scale that no artificial system has been able to match. For decades, reverse engineering the br…
Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate
Zijian Zhao, Sola Woo, Khandker Akif Aabrar +22
In this work, we propose a dual-port cell design to address the pass disturb in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. W…
Logic Compatible High-Performance Ferroelectric Transistor Memory
Sourav Dutta, Huacheng Ye, Abhishek Khanna +11
Silicon ferroelectric field-effect transistors (FeFETs) with low-k interfacial layer (IL) between ferroelectric gate stack and silicon channel suffers from high write voltage, limi…