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cond-mat.mes-hall2026
Multi-bit Ferroelectric-NAND for High-throughput Massive Database Search
Prasanna Venkatesan, Tanvir H. Pantha, Po-Kai Hsu +28
The growing demand for large-scale database search in data-intensive applications, ranging from proteomics to autonomous systems, has exposed fundamental limitations in von Neumann…
cond-mat.mtrl-sci2026
Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors
Lance Fernandes, Yu-Hsin Kuo, Chengyang Zhang +15
In this work, we report a systematic study of the impact of high-temperature post-capping thermal annealing on the memory characteristics of Oxide-semiconductor channel ferroelectr…
cond-mat.mtrl-sci2026
ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications
Ranie Jeyakumar, Prasanna Venkatesan, Lance Fernandes +12
Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material…