3 papers
cond-mat.mtrl-sci2026
ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications
Ranie Jeyakumar, Prasanna Venkatesan, Lance Fernandes +12
Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material…
physics.app-ph2025
Vertical NAND in a Ferroelectric-driven Paradigm Shift
Giuk Kim, Hyojun Choi, Prasanna Venkat Ravindran +12
Over the past decades, the relentless scaling and mass production of flash memory have underpinned the data-centric era. Yet charge-trap-based 3D NAND flash is now constrained by i…
cs.AR2025
FeNOMS: Enhancing Open Modification Spectral Library Search with In-Storage Processing on Ferroelectric NAND (FeNAND) Flash
Sumukh Pinge, Ashkan Moradifirouzabadi, Keming Fan +29
The rapid expansion of mass spectrometry (MS) data, now exceeding hundreds of terabytes, poses significant challenges for efficient, large-scale library search - a critical compone…