20 citations · 20 across the 6 of their papers we have counts for
4 papers · 1 filter
Quantifying the Full Damage Profile of Focused Ion Beams via 4D-STEM Precession Electron Diffraction and PSNR Metrics
M. G. Masteghin, Z. P. Aslam, A. P. Brown +4
Focused ion beams (FIBs) are widely used in nanofabrication for applications such as circuit repair, ultra-thin lamella preparation, strain engineering, and quantum device prototyp…
Enhanced Secondary Electron Detection of Single Ion Implants in Silicon Through Thin SiO2 Layers
Ella B Schneider, Oscar G Lloyd-Willard, Kristian Stockbridge +7
Deterministic placement of single dopants is essential for scalable quantum devices based on group-V donors in silicon. We demonstrate a non-destructive, high-efficiency method for…
Absolute measurement of the exchange interaction in an InSb quantum well using Landau-level tunnelling spectroscopy
S. K. Clowes, C. P. Allford, D. Shearer +5
We studied InSb quantum well devices using Landau level tunneling spectroscopy through a three-terminal differential conductance technique. This method is similar to filled state s…
Roadmap on Atomic-scale Semiconductor Devices
Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…