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Mengwei Si

7 papers hereh-index 8224 citations50 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author1
  • last author4

Across the 5 of 7 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci7

identity via Semantic Scholar / OpenAlex

activity
20232026
most citedEnlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2

1 citations · 1 across the 5 of their papers we have counts for

collaborators
Showing 2025Show all

2 papers · 1 filter

cond-mat.mtrl-sci2025

Dielectric Deposition Enhanced Crystallization in Atomic-Layer-Deposited Indium Oxide Transistors Achieving High Gated-Hall Mobility Exceeding 100 cm2/Vs at Room Temperature

Chen Wang, Kai Jiang, Jinxiu Zhao +4

In this work, we report high-performance atomic-layer-deposited indium oxide (In2O3) transistors with high gated-Hall mobility (μH) exceeding 100 cm2/Vs at room temperature (RT). I…

cond-mat.mtrl-sci2025

Are There High-Density Deep States in AtomicLayer-Deposited IGZO Thin Film?

Liankai Zheng, Lijuan Xing, Zhiyu Lin +9

It has been well recognized that there exist high-density deep states in IGZO thin films. Many of the device characteristics of IGZO transistors, such as negative bias illumination…

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