1 citations · 1 across the 5 of their papers we have counts for
7 papers
Investigation of Hopping Conduction and Its Impact on the Subthreshold and Transition Region Transport in Oxide Semiconductor Transistors by Magneto-Transport Measurements
Chen Wang, Liankai Zheng, Kai Jiang +4
In this work, magneto-transport measurements, including Hall effects and magnetoresistance (MR) at various temperatures, are employed to directly probe the electron transport prope…
Demonstrate of High-Performance Top-Gate ALD Crystalline In2O3 Transistor Enabled by Lattice-Matched HfO2 and In2O3 Heterostructure
Kai Jiang, Chen Wang, Ziheng Wang +2
In this work, we demonstrate high-mobility top-gate (TG) atomic-layer-deposited (ALD) crystalline In2O3 transistors through simultaneous interface and crystallinity engineering. Fi…
High-Performance Scaled P-Type SnOx Transistor by Atomic Layer Deposition with CFET Integration
Ziheng Wang, Wen He, Chen Gu +8
The development of high-performance p-type oxide semiconductors is essential for realizing complementary logic for monolithic 3D integration, yet p-type oxide semiconductors still…
High-Mobility and High-Reliability Top-Gate Oxide Semiconductor Transistors by Oxygen Engineering
Kai Jiang, Zhiyu Lin, Ziheng Wang +2
In this work, we investigate the role of oxygen (O) on the performance of top-gate (TG) atomic-layer-deposited (ALD) oxide semiconductor transistors. The results reveal distinct de…
Dielectric Deposition Enhanced Crystallization in Atomic-Layer-Deposited Indium Oxide Transistors Achieving High Gated-Hall Mobility Exceeding 100 cm2/Vs at Room Temperature
Chen Wang, Kai Jiang, Jinxiu Zhao +4
In this work, we report high-performance atomic-layer-deposited indium oxide (In2O3) transistors with high gated-Hall mobility (μH) exceeding 100 cm2/Vs at room temperature (RT). I…
Are There High-Density Deep States in AtomicLayer-Deposited IGZO Thin Film?
Liankai Zheng, Lijuan Xing, Zhiyu Lin +9
It has been well recognized that there exist high-density deep states in IGZO thin films. Many of the device characteristics of IGZO transistors, such as negative bias illumination…
Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2
Tao Hu, Xiaoqing Sun, Mingkai Bai +12
In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting a…