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Mengwei Si

4 papers hereh-index 8224 citations50 works total

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author position
  • last author4

Across the 4 of 4 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci4
same name
  • Mengwei Si — 2 papers

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

collaborators

4 papers

cond-mat.mtrl-sci2026

High-Performance Scaled P-Type SnOx Transistor by Atomic Layer Deposition with CFET Integration

Ziheng Wang, Wen He, Chen Gu +8

The development of high-performance p-type oxide semiconductors is essential for realizing complementary logic for monolithic 3D integration, yet p-type oxide semiconductors still…

cond-mat.mtrl-sci2026

High-Mobility and High-Reliability Top-Gate Oxide Semiconductor Transistors by Oxygen Engineering

Kai Jiang, Zhiyu Lin, Ziheng Wang +2

In this work, we investigate the role of oxygen (O) on the performance of top-gate (TG) atomic-layer-deposited (ALD) oxide semiconductor transistors. The results reveal distinct de…

cond-mat.mtrl-sci2025

Dielectric Deposition Enhanced Crystallization in Atomic-Layer-Deposited Indium Oxide Transistors Achieving High Gated-Hall Mobility Exceeding 100 cm2/Vs at Room Temperature

Chen Wang, Kai Jiang, Jinxiu Zhao +4

In this work, we report high-performance atomic-layer-deposited indium oxide (In2O3) transistors with high gated-Hall mobility (μH) exceeding 100 cm2/Vs at room temperature (RT). I…

cond-mat.mtrl-sci2025

Are There High-Density Deep States in AtomicLayer-Deposited IGZO Thin Film?

Liankai Zheng, Lijuan Xing, Zhiyu Lin +9

It has been well recognized that there exist high-density deep states in IGZO thin films. Many of the device characteristics of IGZO transistors, such as negative bias illumination…

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