1 citations · 1 across the 5 of their papers we have counts for
6 papers
VRM: Teaching Reward Models to Understand Authentic Human Preferences
Biao Liu, Ning Xu, Junming Yang +2
Large Language Models (LLMs) have achieved remarkable success across diverse natural language tasks, yet the reward models employed for aligning LLMs often encounter challenges of…
Unveiling Retention Loss Mechanism in FeFETs with Gate-side Interlayer by Decoupling Trapped Charges and Ferroelectric Polarization
Runhao Han, Tao Hu, Jia Yang +10
We propose a direct experimental extraction technique for trapped charges and quantitative energy band diagrams in the FeFETs with metal-insulator-ferroelectric-insulator-semicondu…
Effect of Top AlO Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/AlO/HfZrO/SiO/Si (MIFIS) Gate Structure
Tao Hu, Xinpei Jia, Runhao Han +17
We investigate the effect of top Al2O3 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistors (Si-FeFETs) with TiN/AlO/Hf$_{0.5…
Impact of the Top SiO2 Interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure
Tao Hu, Xianzhou Shao, Mingkai Bai +13
We study the impact of top SiO2 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistor (FeFET) with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS…
Impact of Top SiO2 interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure
Tao Hu, Xianzhou Shao, Mingkai Bai +13
We study the impact of top SiO2 interlayer thickness on memory window of Si channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. The memory window increases wit…
Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2
Tao Hu, Xiaoqing Sun, Mingkai Bai +12
In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting a…