17 citations · 25 across the 15 of their papers we have counts for
7 papers · 1 filter
Defect-Mediated Phase Engineering of 2D Ag at the Graphene/SiC Interface
Arpit Jain, Boyang Zheng, Sawani Datta +23
Atomically thin silver (Ag) films offer unique opportunities in plasmonic, quantum optics, and energy harvesting, yet conventional growth methods struggle to achieve structural con…
Point defects and their dynamic behaviors in silver monolayer intercalated between graphene and SiC
Van Dong Pham, Arpit Jain, Chengye Dong +4
Point defects give rise to sharp modifications in the structures and electronic properties of two-dimensional metals, offering an atomic-level platform for fundamental studies and…
Atomically-resolved exciton emission from single defects in MoS
Lysander Huberich, Eve Ammerman, Gu Yu +11
Understanding how atomic defects shape the nanoscale optical properties of two-dimensional (2D) semiconductors is essential for advancing quantum technologies and optoelectronics.…
Orbital Hybridization-Induced Ising-Type Superconductivity in a Confined Gallium Layer
Hemian Yi, Yunzhe Liu, Chengye Dong +24
In low-dimensional superconductors, the interplay between quantum confinement and interfacial hybridization effects can reshape Cooper pair wavefunctions and induce novel forms of…
Layer-Dependent Interfacial Coupling and Exciton Pinning in WSe2/Graphene Heterostructures
Lan Huang, Laric Bobzien, Ángel Labordet Álvarez +7
Understanding interfacial interactions in two-dimensional heterostructures is crucial for their implementation in future optoelectronic and quantum technologies. Here, we investiga…
Atomic-scale imaging of graphene nanoribbons on graphene after polymer-free substrate transfer
Amogh Kinikar, Feifei Xiang, Lucia Palomino Ruiz +12
On-surface synthesis enables the fabrication of atomically precise graphene nanoribbons (GNRs) with properties defined by their shape and edge topology. While this bottom-up approa…
Two-dimensional Indium Oxide at the Epitaxial Graphene/SiC Interface: Synthesis, Structure, Properties, and Devices
Furkan Turker, Bohan Xu, Chengye Dong +15
High-quality two-dimensional (2D) dielectrics are crucial for fabricating 2D/3D hybrid vertical electronic devices such as metal-oxide-semiconductor (MOS) based Schottky diodes and…