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Calculations of pathways of precise P incorporation into chlorinated Si(100) surface
T. V. Pavlova
The precise incorporation of a phosphorus atom into a silicon surface is essential for the fabrication of nanoelectronic devices in which the active area is formed from single impu…
Surface diffusion of phosphorus on Si(100) after PBr3 adsorption
T. V. Pavlova, V. M. Shevlyuga
Phosphorus diffusion on a Si(100) surface was studied using scanning tunneling microscopy (STM) at temperatures of 77 and 300 K. The phosphorus source utilized was the PBr mole…
Enhancing the reactivity of Si(100)-Cl toward PBr3 by charging Si dangling bonds
T. V. Pavlova, V. M. Shevlyuga
The interaction of the PBr3 molecule with Si dangling bonds (DBs) on a chlorinated Si(100) surface was studied. The DBs were charged in a scanning tunneling microscope (STM) and th…
PBr3 adsorption on a chlorinated Si(100) surface with mono- and bivacancies
T. V. Pavlova, V. M. Shevlyuga
For the most precise incorporation of single impurities in silicon, which is utilized to create quantum devices, a monolayer of adatoms on the Si(100) surface and a dopant-containi…