35 citations · 238 across the 20 of their papers we have counts for
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A Laser-ARPES View of the 2D Electron Systems at LaAlO3/SrTiO3 and Al/SrTiO3 Interfaces
Siobhan McKeown Walker, Margherita Boselli, Emanuel A. Martínez +3
We have measured the electronic structure of the two-dimensional electron system (2DES) found at the Al/SrTiO3 (Al/STO) and LaAlO3/SrTiO3 (LAO/STO) interfaces by means of laser ang…
Probing Quantum Confinement and Electronic Structure at Polar Oxide Interfaces
Danfeng Li, Sébastien Lemal, Stefano Gariglio +5
Polar discontinuities occurring at interfaces between two different materials constitute both a challenge and an opportunity in the study and application of a variety of devices. I…
A semiquantitative approach to the impurity-band-related transport properties of GaMnAs nanolayers
E. J. R. de Oliveira, E. Dias Cabral, M. A. Boselli +1
We investigate the spin-polarized transport of GaMnAs nanolayers in which a ferromagnetic order exists below a certain transition temperature. Our calculation for the self-averaged…
Impurity bands and the character of the electronic states in ferromagnetic GaMnAs layers
E. Dias Cabral, M. A. Bosellli, A. T. da Cunha Lima +1
The interplay between disorder and spin polarization in a GaMnAs thin layer results into spin-polarized impurity hole bands. A figure of merit is defined to label the hole state as…
On the nature of the spin-polarized hole states in a quasi-two-dimensional GaMnAs ferromagnetic layer
E. Dias Cabral, M. A. Boselli, A. T. da Cunha Lima +2
A self-consistent calculation of the density of states and the spectral density function is performed in a two-dimensional spin-polarized hole system based on a multiple-scattering…
Spin-polarized transport in GaMnAs multilayers
L. Loureiro da Silva, M. A. Boselli, X. F. Wang +2
The spin-dependent mobility for the lateral transport of the hole gas in a GaMnAs/GaAs heterostructure containing several metallic-like ferromagnetic layers is calculated. The elec…