105 citations · 355 across the 21 of their papers we have counts for
16 papers · 1 filter
Low charge noise quantum dots with industrial CMOS manufacturing
Asser Elsayed, Mohamed Shehata, Clement Godfrin +12
Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling…
Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation
M. Mohamed El Kordy Shehata, George Simion, Ruoyu Li +7
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integra…
Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process
N. I. Dumoulin Stuyck, R. Li, C. Godfrin +12
Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 3…
A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
R. Li, N. I. Dumoulin Stuyck, S. Kubicek +12
We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modificat…
Spin-momentum locking and Majorana fermions in charge carrier hole epitaxial wires
G. E. Simion, Y. B. Lyanda-Geller
Epitaxial semiconductor nanowires with charge carrier holes can exhibit an infinite mass of holes and spin-locking due to chiral spectrum linear in momentum and spin. The criterion…
Parafermion supporting platform based on spin transitions in the fractional quantum Hall effect regime
Tailung Wu, Aleksandr Kazakov, George Simion +7
We propose an experimentally-feasible system based on spin transitions in the fractional quantum Hall effect regime where parafermions, high-order non-abelian excitations, can be p…