63 citations · 104 across the 7 of their papers we have counts for
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Femtosecond pump-probe absorption edge spectroscopy of cubic GaN
Elias Baron, Rüdiger Goldhahn, Shirly Espinoza +6
Time-dependent femtosecond pump-probe spectroscopic ellipsometry studies on zincblende gallium-nitride (zb-GaN) are performed and analyzed between 2.9-3.7eV. An ultra-fast change o…
MBE growth of cubic AlxIn1-xN and AlxGayIn1-x-yN lattice matched to GaN
D. J. As, M. Schnietz, J. Schoermann +4
Ternary and quaternary cubic c-AlxIn1-xN/GaN and c-AlxGayIn1-x-y/GaN heterostructures lattice-matched to c-GaN on freestanding 3C-SiC substrates were grown by plasma-assisted molec…
MBE Growth of Cubic InN
J. Schoermann, D. J. As, K. Lischka
Cubic InN films were grown on top of a c-GaN buffer layer by rf-plasma assisted MBE at different growth temperatures. X-Ray diffraction investigations show that the c-InN layers co…
Room temperature green light emissions from nonpolar cubic InGaN/GaN multi quantum wells
S. F. Li, J. Schoermann, D. J. As +1
Cubic InGaN/GaN multi quantum wells (MQWs) with high structural and optical quality are achieved by utilizing free-standing 3C-SiC (001) substrates and optimizing InGaN quantum wel…
In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction
J. Schoermann, S. Potthast, D. J. As +1
Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001)substrates. In situ reflection high energy electron diffraction was used to quantitatively dete…