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D. As

3 papers here

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  • middle author3

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci3

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most citedIn situ growth regime characterization of cubic GaN using reflection high energy electron diffraction

63 citations · 64 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2007

MBE Growth of Cubic InN

J. Schoermann, D. J. As, K. Lischka

Cubic InN films were grown on top of a c-GaN buffer layer by rf-plasma assisted MBE at different growth temperatures. X-Ray diffraction investigations show that the c-InN layers co…

cond-mat.mtrl-sci2007★ 1 cited

Room temperature green light emissions from nonpolar cubic InGaN/GaN multi quantum wells

S. F. Li, J. Schoermann, D. J. As +1

Cubic InGaN/GaN multi quantum wells (MQWs) with high structural and optical quality are achieved by utilizing free-standing 3C-SiC (001) substrates and optimizing InGaN quantum wel…

cond-mat.mtrl-sci2007★ 63 cited

In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction

J. Schoermann, S. Potthast, D. J. As +1

Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001)substrates. In situ reflection high energy electron diffraction was used to quantitatively dete…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.