9 citations · 18 across the 6 of their papers we have counts for
6 papers
Innovating at Speed and at Scale: A Next Generation Infrastructure for Accelerating Semiconductor Technologies
Richard A. Gottscho, Edlyn V. Levine, Tsu-Jae King Liu +7
Semiconductor innovation drives improvements to technologies that are critical to modern society. The country that successfully accelerates semiconductor innovation is positioned t…
Low Resistance III-V Hetero-contacts to N-Ge
Junkyo Suh, Pranav Ramesh, Andrew C. Meng +6
We experimentally study III-V/Ge heterostructure and demonstrate InGaAs hetero-contacts to n-Ge with a wide range of In % and achieve low contact resistivity () of $5\times10^…
Electron Beam Irradiation of Gallium Nitride-on-Silicon Betavoltaics Fabricated with a Triple Mesa Etch
T. Heuser, M. Braun, D. G. Senesky
A process for growing gallium nitride (GaN) vertical p-i-n homojunctions on (111) silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD) was developed, and a…
Control of InGaAs facets using metal modulation epitaxy (MME)
Mark A. Wistey, Ashish K. Baraskar, Uttam Singisetti +6
Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs adjacent to patterned…
Nucleation and growth of germanium islands during layer exchange metal-induced crystallization
Shu Hu, Paul C. McIntyre
Al-induced layer exchange crystallization of amorphous Ge thin films has been demonstrated recently, and provides a suitable system to characterize, model and control Ge crystal gr…
Direct Observation of Polarization vs. Thickness Relation in Ultra-Thin Ferroelectric Films
Rene Meyer, Arturas Vailionis, Paul. C. McIntyre
A reduction of polarization in ultra-thin ferroelectric films appears to be fundamental to ferroelectricity at the nanoscale. For the model system PbTiO3 on SrTiO3, we report obser…