STEM analysis of deformation and B distribution in nanosecond laser ultra-doped Si${}_{1-x}$ B${}_x$

G. Hallais, G. Patriarche, L. Desvignes +2

We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. We investigate the crystalline quality, deformation and B distribu…