activity
20072022
most citedLow temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

39 citations · 97 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2022★ 10 cited

STEM analysis of deformation and B distribution in nanosecond laser ultra-doped Si B

G. Hallais, G. Patriarche, L. Desvignes +2

We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. We investigate the crystalline quality, deformation and B distribu…

cond-mat.mes-hall2017★ 4 cited

Room temperature magneto-optic effect in silicon light-emitting diodes

F. Chiodi, S. L. Bayliss, L. Barast +4

In weakly spin-orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, for example on electro-luminescence from molecular…

cond-mat.mes-hall2016★ 14 cited

All silicon Josephson junctions

F. Chiodi, J. -E. Duvauchelle, C. Marcenat +2

We have realised laser-doped all-silicon superconducting (S)/ normal metal (N) bilayers of tunable thickness and dopant concentration. We observed a strong reduction of the bilayer…

cond-mat.supr-con2011★ 16 cited

Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

K. Hoummada, F. Dahlem, T. Kociniewski +7

Superconducting boron-doped silicon films prepared by gas immersion laser doping (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical co…

cond-mat.supr-con2010★ 14 cited

Subkelvin tunneling spectroscopy showing Bardeen-Cooper-Schrieffer superconductivity in heavily boron-doped silicon epilayers

F. Dahlem, T. Kociniewski, C. Marcenat +8

Scanning tunneling spectroscopies in the subKelvin temperature range were performed on superconducting Silicon epilayers doped with Boron in the atomic percent range. The resulting…

cond-mat.supr-con2009★ 39 cited

Low temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

C. Marcenat, J. Kacmarcik, R. Piquerel +11

We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentratio…

physics.optics2007

Tunable Ti:Al2O3 oscillator optimized for high-repetition-rate and short pulses

J. Sawinski, D. Debarre, W. Denk

A laser was designed and constructed with the goal of producing ultra-short pulses at a high repetition rate as needed for certain applications of multi-photon microscopy. With pur…